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双N-MOS

MX8205L

    MX8205L是VDS=20V,ID=6A,RDS(ON)(Typ.)=16m,@VGS=4.5V,RDS(ON)(Typ.)=17m,@VGS=3.8V,RDS(ON)(Typ.)=21m,@VGS=2.5V的N沟道MOSFET.
    MX8205L提供SOT-23-6封装.
    The MX8205L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
    This device is suitable for use as a Battery protection or in other Switching applications.

    MX8205L概述:
        MX8205L是VDS=20V,ID=6A,RDS(ON)(Typ.)=16m,@VGS=4.5V,RDS(ON)(Typ.)=17m,@VGS=3.8V,RDS(ON)(Typ.)=21m,@VGS=2.5V的N沟道MOSFET.MX8205L提供SOT-23-6封装.
        The MX8205L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications.

    MX8205L特性:

    VDS = 20V,ID =6A
    RDS(ON) (Typ.) =16m@ VGS=4.5V
    RDS(ON) (Typ.) =17m @ VGS=3.8V
    RDS(ON)(Typ.) =21m @ VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    MX8205L应用:

    Battery protection
    Load switch
    Power management

    MX8205L典型应用及引脚图:

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