Service Hotline: 13823761625

Products

Contact Us

You are here:Home >> Products >> Mosfet >> D-N-MOS

D-N-MOS

MXN2508 DFN2x5-6L

    MXN2508是VDS=20V,ID=8A,@VGS=4.5V,RDS(ON)(Typ.)=14m?,@VGS=4.2V,RDS(ON)(Typ.)=14.4m?,@VGS=3.8V,RDS(ON)(Typ.)=15.6m?,@VGS=2.5V,RDS(ON)(Typ.)=19m?的Dual N-Channel MOSFET.
    MXN2508提供DFN2x5-6L封装.
    The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
    This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

    MXN2508概述:
        MXN2508是VDS=20V,ID=8A,@VGS=4.5V,RDS(ON)(Typ.)=14m?,@VGS=4.2V,RDS(ON)(Typ.)=14.4m?,@VGS=3.8V,RDS(ON)(Typ.)=15.6m?,@VGS=2.5V,RDS(ON)(Typ.)=19m?的Dual N-Channel MOSFET.MXN2508提供DFN2x5-6L封装.
        The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

    MXN2508特性:

    VDS =20V,ID =8A
    @VGS=4.5V RDS(ON)(Typ.)=14m?
    @VGS=4.2V RDS(ON)(Typ.)=14.4m?
    @VGS=3.8V RDS(ON)(Typ.)=15.6m?
    @VGS=2.5V RDS(ON)(Typ.)=19m?
    ESD Rating: 2000V HBM
    Asvanced trench MOSFET process technology
    Ultra low on-resistance with low gate charge
    New Thermally Enhanced DFN2X5-6L Package

    MXN2508应用:

    PWM applications
    Load switch
    Battery charge in cellular handset

    MXN2508典型应用及引脚图:

    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

    *

    *

    *

    *

Related products