Toshiba launched the third generation 650V SiC Schottky barrier diode to help improve the efficiency of industrial equipment
Time:2023-07-15
Views:729
Toshiba Electronic Components and Storage Devices Co., Ltd. ("Toshiba") today announced the launch of the latest generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment - "TRSxxx65H series". Out of the first 12 products (all 650V), 7 are packaged in TO-220-2L, while the remaining 5 are DFN8 × 8 packages, starting today to support bulk shipments.
The new product uses a Nu metal in the 3rd generation SiC SBD chip, which optimizes the junction barrier Schottky (JBS) structure of the 2nd generation product [2]. They achieve industry-leading 1.2V (typical value) low forward voltage, which is 17% lower than the previous generation‘s 1.45V (typical value). In addition, the new product also achieves a balance between forward voltage and total capacitance charge, as well as between forward voltage and reverse current, thereby reducing power consumption and improving equipment efficiency.
• Application
-Switching power supply
-Electric vehicle Charging station
-Solar inverter
• Characteristics
-Industry leading [3] low forward voltage: VF=1.2V (typical value) (IF=IF (DC))
-Low reverse current: TRS6E65H IR=1.1 μ A (typical value) (VR=650V)
-Low total capacitance charge: TRS6E65H QC=17nC (typical value) (VR=400V, f=1MHz)
• Main specifications
Note:
[1] As of July 2023.
[2] The JBS structure can reduce the electric field at the Schottky interface, thereby reducing leakage current.
[3] Toshiba survey as of July 2023.
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