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The integrated current isolation function of the Italian semiconductor GaN driver provides excellent safety and reliability

Time:2023-09-09 Views:615
    Italian Semiconductor has launched its first gallium nitride (GaN) transistor gate driver with current isolation function. The new product STGAP2GS has reduced chip size, reduced bill of materials costs, and can meet higher requirements for energy efficiency, safety, and electrical protection of wide bandgap chips in applications.
    This single channel driver can connect up to 1200V voltage rails, while the STGAP2GSN narrow version can connect up to 1700V voltage rails, with a gate drive voltage of up to 15V. This driver can inject and source up to 3A current into the connected GaN transistor gate, and can accurately control the switching operation of the power transistor even at high operating frequencies.
    The propagation delay of STGAP2GS across isolation barriers is extremely short, only 45ns, and its dynamic response is fast. In addition, within the entire operating temperature range, the dV/dt transient voltage tolerance is ± 100V/ns, which can prevent unnecessary changes in the transistor gate current. The STGAP2GS has independent sink current and source current pins, allowing for easy adjustment of gate drive operation and performance.
    The STGAP2GS driver does not require the use of optical isolation discrete components, making it convenient for consumer electronics, industrial control and other products and equipment to adopt efficient and robust GaN technology. The target applications include computer server power supply, factory automation equipment, motor drivers, solar power generation, wind power generation systems, household appliances, household fans, and wireless chargers.
    In addition to the integrated current isolation function, the new driver also has built-in system protection functions, including thermal shutdown and undervoltage lockout (UVLO) optimized for GaN technology, ensuring the reliability and variability of the driver.
    The EVSTGAP2GS and EVSTGAP2GSN demonstration boards integrate the standard version STGAP2GS and narrow version STGAP2GSN with ST‘s SGT120R65AL 75m Ω and 650V enhanced GaN transistors, helping users evaluate the functionality of the driver.
    STGAP2GS using SO-8 wide body packaging and STGAP2GSN using SO-8 narrow body packaging are now available on the market.



 












   
      
      
   
   


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