Service Hotline: 13823761625

News

Contact Us

You are here:Home >> News >> Industry News

Industry News

Micron is the first to provide industry partners with high-speed, low latency 128GB high-capacity RDIMM memory based on 32Gb single chip DRAM

Time:2023-12-01 Views:417
    Micron is based on 1 β The advanced DRAM process has a DRAM speed of up to 8000 MT/s, providing better solutions for memory intensive applications such as generative AI
    Micron Technology, Inc. (NASDAQ stock code: MU) recently announced the industry-leading launch of 128GB DDR5 RDIMM memory based on 32Gb single bare chips, with first-class performance of up to 8000 MT/s, supporting current and future data center workloads. This high-capacity, high-speed memory module is specifically designed for a wide range of task critical applications in data centers and cloud environments, such as artificial intelligence (AI), in memory databases (IMDB), and scenarios that require efficient processing of multi-threaded, multi-core general-purpose computing workloads, meeting their performance and data processing needs. Micron‘s 128GB DDR5 RDIMM memory based on 32Gb DDR5 DRAM bare chips adopts industry-leading 1 β Compared to competitors using 3DS silicon via (TSV) technology, the (1-beta) process technology has significantly improved in the following aspects:
    More than 45% increase in capacity density
    Energy efficiency improvement up to 24%
    Delay reduction up to 16%
    AI training performance has been improved by up to 28% [3]
    Praveen Vaidyanathan, Vice President and General Manager of the Computing Products Business Group at Micron, stated: "We are very proud that Micron‘s 128GB DDR5 RDIMM has set a new benchmark for large capacity and high-speed memory in data centers, providing the required memory bandwidth and capacity for the growing computationally intensive workloads. Micron will accelerate the provision of advanced technology to provide more timely support for designing and integrating large capacity storage solutions, thereby promoting the development of the data center ecosystem."
    Micron‘s 32Gb DDR5 memory solution adopts an innovative bare chip architecture, achieving excellent array efficiency and larger single block DRAM bare chip capacity density. The voltage domain and refresh management functions help optimize the power transmission network and achieve the required energy efficiency improvement. In addition, the aspect ratio of the bare chip size has been optimized, which helps to improve the manufacturing efficiency of 32Gb high-capacity DRAM bare chips.
    By adopting AI driven intelligent manufacturing technology, Micron‘s 1 β The technology node has achieved mature yield at the fastest speed in the company‘s history [4]. Micron‘s 128GB RDIMM will be shipped to platforms supporting speeds of 4800 MT/s, 5600 MT/s, and 6400 MT/s in 2024, and will also support platforms up to 8000 MT/s in the future.
    Dan McNamara, Senior Vice President and General Manager of the Server Division at AMD, stated: The Micron 128GB RDIMM will provide us with a larger single core memory capacity for our latest fourth generation AMD EPYC processor, and the 32Gb single block DRAM bare chip can provide lower total cost of ownership for business critical data enterprise workloads such as AI, high-performance computing, and virtualization. With AMD promoting the next generation EPYC processor to boost computing power, the Micron 128GB RDIMM is expected to become one of our main memory solutions by providing large capacity "And excellent single core bandwidth capability to meet the needs of memory intensive applications."
    Dr. Dimitrios Ziakas, Vice President of Intel Memory and IO Technology, said, "We look forward to Micron‘s 128GB RDIMM solution based on 32Gb bare chips bringing better bandwidth and performance per watt to the server and AI systems market. Intel is evaluating this 32Gb bare chip memory product for critical DDR5 server platforms based on overall cost-effectiveness for cloud, AI, and enterprise customers."
    Micron‘s 32Gb DRAM bare chips have higher bandwidth and energy efficiency, allowing for the construction of MRDIMM product solutions that comply with MCRDIMM and JEDEC standards at 128GB, 256GB, and higher capacities, thereby expanding more memory product portfolios. With industry-leading process and design technology innovation, Micron offers a range of memory products covering external specifications such as RDIMM, MCRDIMM, MRDIMM, CXL, and LP, helping customers easily integrate these optimized solutions to meet the needs of AI and high-performance computing (HPC) applications for high bandwidth, large capacity, and low power consumption.
 












   
      
      
   
   


    Disclaimer: This article is transferred from other platforms and does not represent the views and positions of this site. If there is any infringement or objection, please contact us to delete it. thank you!
    矽源特科技ChipSourceTek