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单N-MOS

PE83H0K TO252-2L

    PE83H0K是VDS=30V,ID=100A,RDS(ON)<3.6mΩ@VGS=10V,RDS(ON)<5.2mΩ@VGS=4.5V的N沟道MOSFET。
    PE83H0K的丝印是PE83H0K。PE83H0K提供TO-252-2L封装。
    The PE83H0K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE83H0K概述:
        PE83H0K是VDS=30V,ID=100A,RDS(ON)<3.6mΩ@VGS=10V,RDS(ON)<5.2mΩ@VGS=4.5V的N沟道MOSFET。
        PE83H0K的丝印是PE83H0K。PE83H0K提供TO-252-2L封装。
        The PE83H0K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE83H0K特性:
    VDS = 30V, ID = 100A
    RDS(ON) < 3.6mΩ@ VGS=10V
    RDS(ON) < 5.2mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE83H0K应用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PE83H0K典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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