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单N-MOS

PE8120HM1 DFN3x3-8L

    PE8120HM1的VDS>12V,ID=20A,RDS(ON)<4.6mΩ,@VGS=4.5V,RDS(ON)<5.0mΩ,@VGS=3.8V,RDS(ON)<5.5mΩ,@VGS=3.0V,RDS(ON)<6.5mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8120HM1的丝印是8120HM.PE8120HM1提供DFN3x3-8L封装.
    The PE8120HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8120HM1概述:
        PE8120HM1的VDS>12V,ID=20A,RDS(ON)<4.6mΩ,@VGS=4.5V,RDS(ON)<5.0mΩ,@VGS=3.8V,RDS(ON)<5.5mΩ,@VGS=3.0V,RDS(ON)<6.5mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8120HM1的丝印是8120HM.PE8120HM1提供DFN3x3-8L封装.
        The PE8120HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8120HM1特性:
    VDS > 12V, ID = 20A
    RDS(ON) < 4.6mΩ@ VGS=4.5V
    RDS(ON) < 5.0mΩ @VGS=3.8V
    RDS(ON) < 5.5mΩ @VGS=3.0V
    RDS(ON) < 6.5mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8120HM1应用:
    PWM applications
    Load switch
    Power management

    PE8120HM1典型应用及引脚:

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