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PE58120G DFN5x6-8L

    PE58120G是VDS=85V,ID=90A,RDS(ON)<6mΩ ,@VGS=10V,RDS(ON)<6.5mΩ ,@VGS=8V的N-Channel Enhancement Mode Power MOSFET.
    PE58120G的丝印是PE58120G.PE58120G提供DFN5x6-8L封装.
    The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58120G概述:
        PE58120G是VDS=85V,ID=90A,RDS(ON)<6mΩ ,@VGS=10V,RDS(ON)<6.5mΩ ,@VGS=8V的N-Channel Enhancement Mode Power MOSFET.PE58120G的丝印是PE58120G.PE58120G提供DFN5x6-8L封装.
        The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58120G特性:
    VDS = 85V, ID = 90A
    RDS(ON) < 6mΩ  @VGS=10V
    RDS(ON) < 6.5mΩ  @VGS=8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120G应用:
    PWM applications
    Load switch
    Power management

    PE58120G典型应用及引脚:

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