HY3010D,HY3010U,HY3010V概述：
HY3010D,HY3010U,HY3010V是VDS=100V,ID=60A,RDS(ON)=10mΩ(typ.),@VGS=10V的N-Channel Enhancement Mode MOSFET.
HY3010D,HY3010U,HY3010V提供TO-252-2L/TO-251-3L/TO-251-3S封装.
HY3010D,HY3010U,HY3010V特性：
HY3010D,HY3010U,HY3010V提供TO-252-2L/TO-251-3L/TO-251-3S封装.
HY3010D,HY3010U,HY3010V特性：
100V/60A
RDS(ON)= 10mΩ(typ.) @VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available(RoHS Compliant)
Package Code
D: TO-252-2L
U: TO-251-3L
V: TO-251-3S
Date Code
YYXXXJWW G
HY3010D,HY3010U,HY3010V应用：
HY3010D,HY3010U,HY3010V应用：
Portable equipment and battery powered systems
DC-DC Converters
Switching application
HY3010D,HY3010U,HY3010V典型应用及引脚：
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