HY4306P/B-矽源特科技ChipSourceTek-音频功放,马达驱动,Mosfet,充电管理,锂保,触摸,LDO,升降压,AC-DC,PD协议,MCU,5G开关,移动电源,微波雷达,

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HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N沟道增强型MOSFET.

HY4306P/B提供TO-220FB-3L/TO-263-2L封装.

HY4306P/B概术：

HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N沟道增强型MOSFET.

HY4306P/B提供TO-220FB-3L/TO-263-2L封装.

HY4306P/B特性：

60V/230A

RDS(ON)=2.6mΩ(typ.)@VGS=10V

100% avalanche tested

Reliable and Rugged

Lead Free and Green DevicesAvailable(RoHS Compliant)

HY4306P/B应用：

Switching application

Power Management for Inverter Systems.

HY4306P/B典型应用电路及封装图：