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单N-MOS

JMTK2006A

    JMTK2006A是20V,60A的,N沟道增强型功率MOSFET,

    JMTK2006A丝印:K2006A,JMTK2006A提供TO-252-2L封装,

    JMTK2006A是20V, 60A,RDS(ON)<6.5mΩ@VGS=4.5V,RDS(ON)<10mΩ@VGS=2.5V,Advanced Trench Technology,Excellent RDS(ON) and Low Gate Charge,Lead free product is acquired
    JMTK2006A概述:
        JMTK2006A是20V,60A的,N沟道增强型功率MOSFET,
        JMTK2006A丝印:K2006A,JMTK2006A提供TO-252-2L封装,
        JMTK2006A是20V, 60A,RDS(ON)<6.5mΩ@VGS=4.5V,RDS(ON)<10mΩ@VGS=2.5V,Advanced Trench Technology,Excellent RDS(ON) and Low Gate Charge,Lead free product is acquired

    JMTK2006A特性:
    20V, 60A
    RDS(ON) < 6.5mΩ @ VGS = 4.5V
    RDS(ON) < 10mΩ @ VGS = 2.5V
    Advanced Trench Technology
    Excellent RDS(ON) and Low Gate Charge
    Lead free product is acquired20V, 60A
    RDS(ON) < 6.5mΩ @ VGS = 4.5V
    RDS(ON) < 10mΩ @ VGS = 2.5V
    Advanced Trench Technology
    Excellent RDS(ON) and Low Gate Charge
    Lead free product is acquired
    JMTK2006A丝印:K2006A
    JMTK2006A提供TO-252-2L封装

    JMTK2006A应用:
    Load Switch
    PWM Application
    Power management

    订购信息:
    Device Marking
    Device
    OUTLINE
    evice Package
    Reel Size
    Reel
    (PCS)
    Per Carton
    (PCS)
    JMTK2006A
    JMTK2006A
    TAPING
    TO-252
    13inch
    2500
    25000

    JMTK2006A典型应用电路图:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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