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单N-MOS

MX0205

    MX0205是VDS=60V,ID=2.8A,RDS(ON)<100m,@VGS=10V,RDS(ON)<115m,@VGS=4.5V的N沟道MOSFET,MX0205提供SOT-23-3L和SOT23封装.

    The MX0205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. 
   
    This device is suitable for use as a Battery protection or in other Switching application.

    MX0205概述:
        MX0205是VDS=60V,ID=2.8A,RDS(ON)<100m,@VGS=10V,RDS(ON)<115m,@VGS=4.5V的N沟道MOSFET,MX0205提供SOT-23-3L和SOT23封装.
        The MX0205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.


    MX0205特性:
    VDS = 60V,ID = 2.8A
    RDS(ON) < 100m @ VGS= 10V
    RDS(ON) < 115m @ VGS= 4.5V
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package
    MX0205提供SOT23-3L和SOT23封装


    MX0205应用:

    Battery Switch
    DC/DC Converter


    MX0205典型应用及封装图:



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