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单N-MOS

MX4408

N-Channel Enhancement Mode Power MOSFET

    The MX4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
    MX4408 Description:
        The MX4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.

    MX4408 Features:
    VDS=30V, ID=13A RDS(ON)(Typ.)=10mΩ@VGS=4.5V,RDS(ON)(Typ.)=7mΩ@VGS=10V
    Hign density cell design for ultra low Rdson
    Lead free product is acquired

    MX4408 Applications:
    Battery protection
    Load switch
    Power management

    MX4408 Pinout:


    MX4408 Ordering Information:
    Part Number
    Marking
    StorageTemperature
    Package
    Devices Per Reel
    MX4408
    4408
    -55°C to 150°C
    SOP-8
    3000




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