MX6018概述:
MX6018是VDS=60V，ID=18A,RDS(ON)(Typ.)10mΩ@Vgs=10V,RDS(ON)(Typ.)13.5mΩ@Vgs=4.5V的N沟道增强型功率MOSFET，
MX6018丝印：6018，MX6018提供SOP8封装，
The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.
MX6018特性：
MX6018丝印：6018，MX6018提供SOP8封装，
The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.
MX6018特性：
VDS =60V，ID=18A
RDS(ON)(Typ.)10mΩ @ Vgs=10V
RDS(ON)(Typ.)13.5mΩ @ Vgs=4.5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Special process technology for high ESD capability
Good stability and uniformity with high EAS Excellent package for good heat dissipation
MX6018丝印：6018
MX6018提供SOP8封装
MX6018应用
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
MX6018典型应用电路图:
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