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单N-MOS

MXD6888K

    MXD6888K是VDS=60V,ID=80A,RDS(ON)(Typ.)=6.8mΩ@VGS=10V的N沟道MOSFET.

    MXD6888K的丝印是6888K.MXD6888K提供TO-252-2L封装。

    The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
    MXD6888K概述:
        MXD6888K是VDS=60V,ID=80A,RDS(ON)(Typ.)=6.8mΩ@VGS=10V的N沟道MOSFET.MXD6888K的丝印是6888K.MXD6888K提供TO-252-2L封装。
        The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

    MXD6888K特性:
    VDS=60V, ID=80A
    RDS(ON)(Typ.)=6.8mΩ @ VGS=10V
    Special Designed for E-Bike Controller Application
    Ultra Low On-Resistance
    High UIS and UIS 100% Test

    MXD6888K应用:
    Power Switching Application
    Hard Switched and High Frequency Circuits
    Uninterruptible Power Supply

    MXD6888K典型应用及引脚图:

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