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单N-MOS

MXN3060

    MXN3060是VDS=30V,ID=80A,RDS(ON)(Typ.)5.0m?,@VGS=10V,RDS(ON)(Typ.)6m?,@VGS=-4.5V的N-Channel MOSFET.

    MXN3060提供DFN5X6-8L封装.

    The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.

    It can be used in awide variety Of applications.

    MXN3060概述:
        MXN3060是VDS=30V,ID=80A,RDS(ON)(Typ.)5.0m?,@VGS=10V,RDS(ON)(Typ.)6m?,@VGS=-4.5V的N-Channel MOSFET.MXN3060提供DFN5X6-8L封装.
        The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.

    MXN3060特性:

    VDS = 30V,ID = 80A
    RDS(ON) (Typ.)5.0m? @ VGS=10V
    RDS(ON) (Typ.)6m? @ VGS=-4.5V
    Low density cell desig
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation

    MXN3060应用:

    Power switching application
    Hard switched and high frequency circuits
    Uninterruptible power supply

    MXN3060典型应用及引脚:

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