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单N-MOS

MXT08N04T

    MXT08N04T是40V,400A,RDS(ON)(Typ.)=1.1mΩ @ VGS=4.5V RDS(ON)(Typ.)=0.85mΩ @ VGS=10V的N沟道增强型功率MOSFET.

    MXT08N04T提供TOLL-8L封装.

    The MXT08N04T uses advanced trench technology to provide excellent R DS(ON) and low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use as a wide variety of applications.
    MXT08N04T概述:
        MXT08N04T是40V,400A,RDS(ON)(Typ.)=1.1mΩ @ VGS=4.5V RDS(ON)(Typ.)=0.85mΩ @ VGS=10V的N沟道增强型功率MOSFET.
        MXT08N04T提供TOLL-8L封装.
        The MXT08N04T uses advanced trench technology to provide excellent R DS(ON) and low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use as a wide variety of applications.

    MXT08N04T特性:
    V DS =40V, I D =400A
    R DS(ON) (Typ.)=1.1mΩ @ V GS =4.5V
    R DS(ON) (Typ.)=0.85mΩ @ V GS =10V
    Surface-mounted package
    Advanced trench cell design
    Super Trench

    MXT08N04T应用:
    Power appliances
    High power inverter system
    Power tool appliances

    MXT08N04T ORDERING INFORMATION:
    Part Number StorageTemperature Package Devices Per Reel
    MXT08N04T -55°C to 150°C TOLL-8L 000

    MXT08N04T典型应用电路及封装图:

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