PE58120P-矽源特科技ChipSourceTek-音频功放,马达驱动,Mosfet,充电管理,锂保,触摸,LDO,升降压,AC-DC,PD协议,MCU,5G开关,移动电源,微波雷达,

产品中心

< >

PE58120P是VDS=85V, ID=120A，RDS(ON)<5.4mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.

PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE58120P概述：

PE58120P是VDS=85V, ID=120A，RDS(ON)<5.4mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE58120P特性：

VDS = 85V, ID = 120 A

RDS(ON) < 5.4mΩ @VGS=10V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE58120P应用：

PWM applications

Load switch

Power management

PE58120P典型应用及引脚：