服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE8108

    PE8108是VDS=18V,ID=8A,RDS(ON)<12mΩ,@VGS=4.5V,RDS(ON)<16mΩ,@VGS=2.5V的N-Channel MOSFET.

    PE8108的丝印是8108.PE8108提供SOT-23-3L封装.

    The PE8108 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8108概述:
        PE8108是VDS=18V,ID=8A,RDS(ON)<12mΩ,@VGS=4.5V,RDS(ON)<16mΩ,@VGS=2.5V的N-Channel MOSFET.PE8108的丝印是8108.PE8108提供SOT-23-3L封装.
        The PE8108 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8108特性:
    VDS = 18V, ID = 8A
    RDS(ON) < 12mΩ @ VGS=4.5V
    RDS(ON) < 16mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8108应用:
    Battery Protection
    Load switch
    Power management

    PE8108典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品