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单N-MOS

PE8124HM1

    PE8124HM1是VDS>12V,ID=24A,RDS(ON)<3.9mΩ,@VGS=4.5V,RDS(ON)<4.2mΩ,@VGS=3.8V,RDS(ON)<4.6mΩ,@VGS=3.0V,RDS(ON)<5.4mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8124HM1的丝印是8124HM.PE8124HM1提供DFN3x3-8L封装.

    The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8124HM1概述:
        PE8124HM1是VDS>12V,ID=24A,RDS(ON)<3.9mΩ,@VGS=4.5V,RDS(ON)<4.2mΩ,@VGS=3.8V,RDS(ON)<4.6mΩ,@VGS=3.0V,RDS(ON)<5.4mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8124HM1的丝印是8124HM.PE8124HM1提供DFN3x3-8L封装.
        The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8124HM1特性:
    VDS > 12V, ID = 24A
    RDS(ON) < 3.9mΩ @ VGS=4.5V
    RDS(ON) < 4.2mΩ @VGS=3.8V
    RDS(ON) < 4.6mΩ @VGS=3.0V
    RDS(ON) < 5.4mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8124HM1应用:
    PWM applications
    Load switch
    Power management

    PE8124HM1典型应用及引脚:

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