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单N-MOS

PE8203A

    PE8203A是VDS=18V,ID=7A,RDS(ON)<24mΩ,@VGS=4.5V,RDS(ON)<25mΩ,@VGS=3.8V,RDS(ON)<32mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8203A的丝印是PE8203A.PE8203A提供TSSOP-8封装.

    The PE8203A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8203A概述:
        PE8203A是VDS=18V,ID=7A,RDS(ON)<24mΩ,@VGS=4.5V,RDS(ON)<25mΩ,@VGS=3.8V,RDS(ON)<32mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8203A的丝印是PE8203A.PE8203A提供TSSOP-8封装.
        The PE8203A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8203A特性:
    VDS = 18V, ID = 7A
    RDS(ON) < 24mΩ @ VGS=4.5V
    RDS(ON) < 25mΩ@VGS=3.8V
    RDS(ON) < 32mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8203A应用:
    Battery Protection
    Load switch

    PE8203A典型应用及引脚:

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