服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE8270M

    PE8270M是VDS=18V,ID=90A,RDS(ON)<4.2mΩ,@VGS=4.5V,RDS(ON)<4.5mΩ,@VGS=3.8V,RDS(ON)<6.5mΩ, @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET

    PE8270M的丝印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封装.

    The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8270M概述:
        PE8270M是VDS=18V,ID=90A,RDS(ON)<4.2mΩ,@VGS=4.5V,RDS(ON)<4.5mΩ,@VGS=3.8V,RDS(ON)<6.5mΩ, @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
        PE8270M的丝印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封装.
        The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8270M特性:
    VDS = 18V, ID = 90A
    RDS(ON) < 4.2mΩ @ VGS=4.5V
    RDS(ON) < 4.5mΩ @ VGS=3.8V
    RDS(ON) < 6.5mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8270M应用:
    PWM applications
    Load switch

    PE8270M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品