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PE8350G

    PE8350G是VDS=30V,ID=50A,RDS(ON)<6mΩ@VGS=10V,RDS(ON)<8.2mΩ@VGS=4.5V的N沟道MOSFET。

    PE8350G的丝印是PE8350G,PE8350G提供DFN5x6-8L封装。

    The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8350G概述:
        PE8350G是VDS=30V,ID=50A,RDS(ON)<6mΩ@VGS=10V,RDS(ON)<8.2mΩ@VGS=4.5V的N沟道MOSFET。
        PE8350G的丝印是PE8350G,PE8350G提供DFN5x6-8L封装。
        The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8350G特性:
    VDS = 30V, ID = 50A
    RDS(ON) < 6mΩ @ VGS=10V
    RDS(ON) < 8.2mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8350G应用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PE8350G典型应用及引脚:



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