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PE8430DG

    PE8430DG是VDS=40V,ID=30A,RDS(ON)<13mΩ@VGS=10V,RDS(ON)<17mΩ@VGS=4.5V的N沟道MOSFET。

    PE8430DG的丝印是PE8430DG,PE8430DG提供DFN5x6-8L封装。

    The PE8430DG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8430DG概述:
        PE8430DG是VDS=40V,ID=30A,RDS(ON)<13mΩ@VGS=10V,RDS(ON)<17mΩ@VGS=4.5V的N沟道MOSFET。
        PE8430DG的丝印是PE8430DG,PE8430DG提供DFN5x6-8L封装。
        The PE8430DG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8430DG特性:
    VDS = 40V, ID = 30A 
    RDS(ON) < 13mΩ @ VGS=10V 
    RDS(ON) < 17mΩ @ VGS=4.5V 
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package

    PE8430DG应用:
    PWM applications 
    Load switch 
    Power management

    PE8430DG典型应用及引脚:

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