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PE8612K是VDS=60V，ID=12A，RDS(ON)<70mΩ @VGS=10V，RDS(ON)<80mΩ @VGS=4.5V的N沟道MOSFET。

PE8612K的丝印是PE8612K，PE8612K提供封装。

The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8612K概述：

PE8612K是VDS=60V，ID=12A，RDS(ON)<70mΩ @VGS=10V，RDS(ON)<80mΩ @VGS=4.5V的N沟道MOSFET。
PE8612K的丝印是PE8612K，PE8612K提供封装。

The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8612K特性：

VDS = 60V, ID = 12A

RDS(ON) < 70mΩ @ VGS=10V

RDS(ON) < 80mΩ @ VGS=4.5V

High Power and current handingcapability

Lead free product is acquired

Surface Mount Package

PE8612K应用：

PWM applications

Load switch

Power management

PE8612K典型应用及引脚：