服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE8680K

    PE8680K是VDS=60V,ID=80A,RDS(ON)<10.5mΩ @VGS=10V的N沟道MOSFET。

    PE8680K的丝印是PE8680K,PE8680K提供TO-252-2L封装。

    The PE8680K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    PE8680K概述:
        PE8680K是VDS=60V,ID=80A,RDS(ON)<10.5mΩ @VGS=10V的N沟道MOSFET。
        PE8680K的丝印是PE8680K,PE8680K提供TO-252-2L封装。
        The PE8680K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

    PE8680K特性:
    VDS=60V, ID =80A 
    RDS(ON) <10.5mΩ  @ VGS=10V
    Advanced trench MOS technology
    Extremely low on-resistance RDS(ON)
    Excellent Qg x RDS(ON) product(FOM)
    Qualified according to JEDEC criteria

    PE8680K应用:
    Motor control and drive
    Battery management
    UPS(uninterruptible power supply)

    PE8680K典型应用及引脚:


    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品