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PE30P11DS SOP8

    PE30P11DS是VDS=-30V,ID=-10A,RDS(ON)<17mΩ,@VGS=-10V,RDS(ON)<25mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装. 
  The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30P11DS概述:
        PE30P11DS是VDS=-30V,ID=-10A,RDS(ON)<17mΩ,@VGS=-10V,RDS(ON)<25mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装.
        The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30P11DS特性:
    VDS = -30V, ID = -10A
    RDS(ON) < 17mΩ @ VGS=-10V
    RDS(ON) < 25mΩ @VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30P11DS应用:
    PWM applications
    Load switch
    Power management

    PE30P11DS典型应用及引脚图:

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