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单P-MOS

MX3117

    MX3117是VDS=-30V, ID=-7A,RDS(ON)(Typ.)=23mΩ@VGS=-4.5V,RDS(ON)(Typ.)=17mΩ@VGS=-10V, 的P沟道MOSFET,MX3117丝印3117C,MX3117提供SOT23-3L封装。

    The MX3117 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
 

    MX3117概述:
        MX3117是VDS=-30V, ID=-7A,RDS(ON)(Typ.)=23mΩ@VGS=-4.5V,RDS(ON)(Typ.)=17mΩ@VGS=-10V, 的P沟道MOSFET,MX3117丝印3117C,MX3117提供SOT23-3L封装。
        The MX3117 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
     
    MX3117特性:
    VDS =-30V, I D =-7A
    RDS(ON) (Typ.)=23mΩ @ V GS =-4.5V
    RDS(ON) (Typ.)=17mΩ @ V GS =-10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package
    MX3317提供SOT23-3L封装
     
    MX3117应用:
    PWM applications
    Load switch
    Power management

    MX3117 ORDERING INFORMATION:

    Part Number
    Marking
    StorageTemperature
    Package

    Devices Per Reel

    MX3117
    3117C
    -55°C to 150°C
    SOT-23-3L
    3000


    MX3117典型应用原理图及封装图:

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