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单P-MOS

MXN3347

    MXN3347是-30V,-35A的,P沟道增强型功率MOSFET,

    MXN3347丝印:3347,

    MXN3347提供PDFN3.3x3.3-8L封装。

    The MXN3347 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages aslow as 4.5V.
    This device is suitable for use as a load switch or in PWM and a wide varieer applications.
    MXN3347概述:
        MXN3347是-30V,-35A的,P沟道增强型功率MOSFET,
        MXN3347丝印:3347,
        MXN3347提供PDFN3.3x3.3-8L封装。
        The MXN3347 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages aslow as 4.5V.
        This device is suitable for use as a load switch or in PWM and a wide varieer applications.

    MXN3347特性:
    VDS =-30V,ID =-35A
    RDS(ON) (Typ.)= 9mΩ@VGS=-10V
    RDS(ON) (Typ.)=13.5mΩ@VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface mount package
    MXN3347丝印:3347
    MXN3347提供PDFN3.3x3.3-8L封装

    MXN3347应用:
    PWM applications
    Load switch
    Power management

    MXN3347典型应用电路图

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