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单P-MOS

PE30P12S

    PE30P12S是VDS=-30V,ID=-12A,RDS(ON)<15mΩ,@VGS=-10V,RDS(ON)<25mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.

    PE30P12S的丝印是3012S.PE30P12S提供SOP-8封装.

    The PE30P12S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30P12S概述:
        PE30P12S是VDS=-30V,ID=-12A,RDS(ON)<15mΩ,@VGS=-10V,RDS(ON)<25mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P12S的丝印是3012S.PE30P12S提供SOP-8封装.
        The PE30P12S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30P12S特性:
    VDS = -30V, ID = -12A
    RDS(ON) < 15mΩ @ VGS=-10V
    RDS(ON) < 25mΩ @VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30P12S应用:
    PWM applications
    Load switch
    Power management
    PE30P12S典型应用及引脚图:

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