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PE3117是VDS=-30V,ID=-7A，RDS(ON)<22mΩ，@VGS=-10V，RDS(ON)<30mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.

PE3117的丝印是3117.PE3117提供SOT-23-3L封装.

The PE3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE3117概述：

PE3117是VDS=-30V,ID=-7A，RDS(ON)<22mΩ，@VGS=-10V，RDS(ON)<30mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
PE3117的丝印是3117.PE3117提供SOT-23-3L封装.

The PE3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE3117特性：

VDS = -30V, ID = -7A

RDS(ON) < 22mΩ @ VGS=-10V

RDS(ON) < 30mΩ @VGS=-4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE3117应用：

PWM applications

Load switch

Power management

PE3117典型应用及引脚图：