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PE4435A是VDS〉-30V,ID=-10.5A,RDS(on)<20mΩ@VGS=-10V,RDS(on)<35mΩ@VGS=-4.5V的P沟道增强型功率MOSFET，

PE4435A丝印：4435，PE4435A提供SOP-8封装

The PE4435A uses advanced trench technology to provide,excellent RDS , low gate charge and operation with gate,voltages as low as -4.5V.

PE4435A概述：
PE4435A是VDS〉-30V,ID=-10.5A,RDS(on)<20mΩ@VGS=-10V,RDS(on)<35mΩ@VGS=-4.5V的P沟道增强型功率MOSFET，
PE4435A丝印：4435，PE4435A提供SOP-8封装

The PE4435A uses advanced trench technology to provide,excellent RDS , low gate charge and operation with gate,voltages as low as -4.5V.

PE4435A特性：

VDS〉-30V,ID=-10.5A

RDS(on)<20m?@VGS=-10V

RDS(on)<35m?@VGS=-4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE4435A丝印：4435

PE4435A提供SOP-8封装

PE4435A应用

Battery Switch

Load switch

Power management

PE4435A典型应用电路图: