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单P-MOS

PE7309DS

    PE7309DS是VDS=-30V,ID=-9A,RDS(ON)<21mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.

    PE7309DS的丝印是PE7309DS.PE7309DS提供SOP-8封装.

    The PE7309DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7309DS概述:
        PE7309DS是VDS=-30V,ID=-9A,RDS(ON)<21mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7309DS的丝印是PE7309DS.PE7309DS提供SOP-8封装.
        The PE7309DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7309DS特性:
    VDS = -30V, ID = -9A
    RDS(ON) < 21mΩ @ VGS=-10V
    RDS(ON) < 32mΩ @VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE7309DS应用:
    PWM applications
    Load switch
    Power management

    PE7309DS典型应用及引脚:

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