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单P-MOS

PED2013M

    PED2013M是VDS=-20V,ID=-40A,RDS(ON)<7mΩ@VGS=-10V,RDS(ON)<8.5mΩ@VGS=-4.5V,RDS(ON)<14mΩ@VGS=-2.5V的P沟道MOSFET。

    PED2013M的丝印是PED2013M,PED2013M提供PDFN3.3x3.3-8L封装。

    The PED2013M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED2013M概述:
        PED2013M是VDS=-20V,ID=-40A,RDS(ON)<7mΩ@VGS=-10V,RDS(ON)<8.5mΩ@VGS=-4.5V,RDS(ON)<14mΩ@VGS=-2.5V的P沟道MOSFET。PED2013M的丝印是PED2013M,PED2013M提供PDFN3.3x3.3-8L封装。
        The PED2013M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED2013M特性:
    VDS = -20V, ID = -40A
    RDS(ON) < 7mΩ @ VGS=-10V
    RDS(ON) < 8.5mΩ @ VGS=-4.5V
    RDS(ON) < 14mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2013M应用:
    PWM applications
    Load switch
    Power management

    PED2013M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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