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PED2015M是VDS=-20V，ID=-40A，RDS(ON)<11mΩ@VGS=-4.5V，RDS(ON)<15mΩ@VGS=-2.5V的P沟道MOSFET。

PED2015M的丝印是PED2015M，PED2015M提供PDFN3.3x3.3-8L封装。

The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED2015M概述：

PED2015M是VDS=-20V，ID=-40A，RDS(ON)<11mΩ@VGS=-4.5V，RDS(ON)<15mΩ@VGS=-2.5V的P沟道MOSFET。PED2015M的丝印是PED2015M，PED2015M提供PDFN3.3x3.3-8L封装。

The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED2015M特性：

VDS = -20V, ID = -40A

RDS(ON) < 11mΩ @ VGS=-4.5V

RDS(ON) < 15mΩ @ VGS=-2.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PED2015M应用：

PWM applications

Load switch

Power management

PED2015M典型应用及引脚：