产品分类
CST3012 TO252-4
N-ch:30V,21mΩ,20A,P-CH-30V,28mΩ,-20A,100% EAS Guaranteed,Green Device Available,
Super Low Gate Charge,Excellent CdV/dt effect decline,Advanced high cell density Trench technology
Super Low Gate Charge,Excellent CdV/dt effect decline,Advanced high cell density Trench technology
CST3012 Description:
CST3012是一款N-Channel：VDS=30V,ID=20A;P-Channel：VDS=-30V,ID=-20A的双沟道MOSFET.
The CST3012 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST3012 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
CST3012 Features:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST3012 Product Summary:
BVDSS | RDSON | ID |
30V | 21mΩ | 20A |
-30V | 28mΩ | -20A |
CST3012 TO252-4 Pin Configuration:
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