产品分类
CST30G20D-PDFN33
CST30G20是N-CH:30V,14mΩ,16A,P-CH:-30V,25mΩ,-14A的N+P-MOS，提供PDFN3.3*3.3-8封装。100% EAS Guaranteed，Green Device Available，Super Low Gate Charge，Excellent CdV/dt effect decline，Advanced high cell density Trench technology
CST30G20D Description:
The CST30G20D is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST30G20D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
CST30G20D Features:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST30G20D Product Summary:
BVDSS | RDSON | ID |
30V | 14mΩ | 16A |
-30V | 25mΩ | -14A |
CST30G20 PDFN3333 Pin Configuration:
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