产品分类
CST30G20F PDFN5*6
CST30G20F PDFN5*6J是N-CH:30V,14mΩ,16A,P-CH:-30V,25mΩ,-14A的N+P-MOS，100% EAS Guaranteed，Green Device Available，Super Low Gate Charge，Excellent CdV/dt effect decline，Advanced high cell density Trench technology
CST30G20F Description：
The CST30G20F is the high performance complementary N-ch and P-ch MOSFETs with high cell density, whichprovide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST30G20F meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
CST30G20F Features:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST30G20F Product Summary:
BVDSS | RDSON | ID |
30V | 14mΩ | 16A |
-30V | 25mΩ | -14A |
CST30G20F PDFN5*6 Pin Configuration:
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