MXN2283概述: MXN2283是VDS=-20V,ID=3.2A,RDS(ON)=68mΩ,@VGS=-4.5V,RDS(ON)=95mΩ,@VGS=-2.5V,RDS(ON)=140mΩ,@VGS=-1.8V的Dual P-Channel MOSFET.MXN2283提供PDFN2x2-6L封装. The MXN2283 uses advanced trench technology and design to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a load switch or in PWM applications. MXN2283特性: VDS=-20V,ID=3.2A RDS(ON)=68mΩ@VGS=-4.5V RDS(ON)=95mΩ@VGS=-2.5V RDS(ON)=140mΩ@VGS=-1.8V High Power and current handing capability Lead free product is acquired Surface Mount Package MXN2283应用: PWM applications Load switch Power management MXN2283典型应用及引脚图: