产品分类
PED30P09M PDFN3.3x3.3-8L
PED30P09M是VDS=-30V，ID=-9A，RDS(ON)<30mΩ@VGS=-10V，RDS(ON)<45mΩ@VGS=-4.5V的P沟道MOSFET。
PED30P09M的丝印是30P09M，PED30P09M提供PDFN3.3x3.3-8L封装。
PED30P09M的丝印是30P09M，PED30P09M提供PDFN3.3x3.3-8L封装。
PED30P09M概述：
PED30P09M是VDS=-30V，ID=-9A，RDS(ON)<30mΩ@VGS=-10V，RDS(ON)<45mΩ@VGS=-4.5V的P沟道MOSFET。PED30P09M的丝印是30P09M，PED30P09M提供PDFN3.3x3.3-8L封装。
The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PED30P09M特性：
VDS=-30V, ID=-9A
RDS(ON)<30mΩ@VGS=-10V
RDS(ON)<45mΩ@VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED30P09M应用：
PWM applications
Load switch
Power management
PED30P09M典型应用及引脚：
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