产品分类
PE30P11DS SOP8
PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17mΩ，@VGS=-10V，RDS(ON)<25mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装.
PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装.
PE30P11DS概述：
PE30P11DS是VDS=-30V,ID=-10A，RDS(ON)<17mΩ，@VGS=-10V，RDS(ON)<25mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P11DS的丝印是PE30P11DS.PE30P11DS提供SOP-8封装.
The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE30P11DS特性：
VDS = -30V, ID = -10A
RDS(ON)<17mΩ@VGS=-10V
RDS(ON)<25mΩ@VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE30P11DS应用：
PWM applications
Load switch
Power management
PE30P11DS典型应用及引脚图：
请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！
关注矽源特公众号
矽源特微信客服
发送邮件
商务QQ客服
13823761625
