产品分类
MXND805 DFN2x2-6L
MXND805是VDS=-12V，ID=-8.5A，@VGS=-4.5V，RDS(ON)(Typ.)=14mΩ，@VGS=-2.5V，RDS(ON)(Typ.)=19mΩ，@VGS=-1.8V，RDS(ON)(Typ.)=29mΩ的P-Channel MOSFET.
MXND805提供DFN2x2-6L封装.
MXND805提供DFN2x2-6L封装.
MXND805概述：
MXND805是VDS=-12V，ID=-8.5A，@VGS=-4.5V，RDS(ON)(Typ.)=14mΩ，@VGS=-2.5V，RDS(ON)(Typ.)=19mΩ，@VGS=-1.8V，RDS(ON)(Typ.)=29mΩ的P-Channel MOSFET.MXND805提供DFN2x2-6L封装.
The MXND805 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switching applications and a wide variety of other applications.
MXND805特性：
VDS =-12V，ID =-8.5A
@VGS=-4.5V RDS(ON)(Typ.)=14mΩ
@VGS=-2.5V RDS(ON)(Typ.)=19mΩ
@VGS=-1.8V RDS(ON)(Typ.)=29mΩ
Asvanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
New Thermally Enhanced DFN2X2-6L Package
MXND805应用：
PWM applications
Load switch
battery charge in cellular handset
MXND805典型应用及引脚图：
MXND805是VDS=-12V，ID=-8.5A，@VGS=-4.5V，RDS(ON)(Typ.)=14mΩ，@VGS=-2.5V，RDS(ON)(Typ.)=19mΩ，@VGS=-1.8V，RDS(ON)(Typ.)=29mΩ的P-Channel MOSFET.MXND805提供DFN2x2-6L封装.
The MXND805 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switching applications and a wide variety of other applications.
MXND805特性：
VDS =-12V，ID =-8.5A
@VGS=-4.5V RDS(ON)(Typ.)=14mΩ
@VGS=-2.5V RDS(ON)(Typ.)=19mΩ
@VGS=-1.8V RDS(ON)(Typ.)=29mΩ
Asvanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
New Thermally Enhanced DFN2X2-6L Package
MXND805应用：
PWM applications
Load switch
battery charge in cellular handset
MXND805典型应用及引脚图：
关注矽源特公众号
矽源特微信客服
发送邮件
商务QQ客服
13823761625
