产品分类
MXN30D12M PDFN3.3x3.3-8L
MXN30D12M是VDS=30V，ID=12A，@VGS=4.5V，RDS(ON)(Typ.)=14mΩ，@VGS=2.5V，RDS(ON)(Typ.)=18mΩ的双N通道MOSFET.
MXN30D12M提供PDFN3.3x3.3-8L封装.
The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be
MXN30D12M提供PDFN3.3x3.3-8L封装.
The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be
MXN30D12M概述：
MXN30D12M是VDS=30V，ID=12A，@VGS=4.5V，RDS(ON)(Typ.)=14mΩ，@VGS=2.5V，RDS(ON)(Typ.)=18mΩ的双N通道MOSFET.
MXN30D12M提供PDFN3.3x3.3-8L封装.
The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
MXN30D12M特性：
VDS=30V，ID=12A
@VGS=4.5V RDS(ON)(Typ.)=14mΩ
@VGS=2.5V RDS(ON)(Typ.)=18mΩ
High density cell design fo ultra low Rdson
Fully characterized Avalanche voltage and current
MXN30D12M应用：
Power switching application
Hard Switched and High Frequency
Circuits Uninterruptible Power Supply
MXN30D12M典型应用及引脚图：
MXN30D12M典型应用及引脚图：
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