产品分类
PE8260M PDFN3.3x3.3-8L
PE8260M是VDS=20V,ID=22A,RDS(ON)<4mΩ,@VGS=4.5V,RDS(ON)<5.4mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
PE8260M概述：
PE8260M是VDS=20V,ID=22A,RDS(ON)<4mΩ,@VGS=4.5V,RDS(ON)<5.4mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE8260M特性：
VDS = 20V, ID = 22A
RDS(ON) < 4mΩ @ VGS=4.5V
RDS(ON) < 5.4mΩ @VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8260M应用：
PWM applications
Load switch
PE8260M典型应用及引脚：
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