产品分类
PE8209HM1 DFN3x3-8L
PE8209HM1是VDS=18V,ID=10A，RDS(ON)<12mΩ，@VGS=4.5V，RDS(ON)<13mΩ，@VGS=3.8V，RDS(ON)<15.5mΩ，@VGS=3.1V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
PE8209HM1概述：
PE8209HM1是VDS=18V,ID=10A，RDS(ON)<12mΩ，@VGS=4.5V，RDS(ON)<13mΩ，@VGS=3.8V，RDS(ON)<15.5mΩ，@VGS=3.1V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE8209HM1特性：
VDS = 18V, ID = 10A
RDS(ON) < 12mΩ @VGS=4.5V
RDS(ON) < 13mΩ @VGS=3.8V
RDS(ON) < 15.5mΩ @VGS=3.1V
RDS(ON) < 20m? @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8209HM1应用：
PWM applications
Load switch
Power management
Battery protection
PE8209HM1典型应用及引脚：
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