MXB050N08 TO-263
MXB050N08是VDS=85V,ID=120A,RDS(ON)(Typ.)=5.3mΩ,@VGS=10V的N沟道MOSFET.MXB050N08丝印是050N08.MXB050N08提供TO-263封装.
The MXB050N08 uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications