产品分类
MXN3016M PDFN3X3-8L
MXN3016M是VDS=30V，ID=45A，@VGS=10V，RDS(ON)(Typ.)=5mΩ，@VGS=4.5V，RDS(ON)(Typ.)=7mΩ的N沟道MOSFET.
MXN3016M的丝印是3016M.MXN3016M提供PDFN3X3-8L封装.
The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device c
MXN3016M的丝印是3016M.MXN3016M提供PDFN3X3-8L封装.
The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device c
MXN3016M概述：
MXN3016M是VDS=30V，ID=45A，@VGS=10V，RDS(ON)(Typ.)=5mΩ，@VGS=4.5V，RDS(ON)(Typ.)=7mΩ的N沟道MOSFET.
MXN3016M的丝印是3016M.MXN3016M提供PDFN3X3-8L封装.
MXN3016M的丝印是3016M.MXN3016M提供PDFN3X3-8L封装.
The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device can be used for a variety of applications
MXN3016M特性：
VDS =30V，ID =45A
@VGS=10V RDS(ON)(Typ.)=5mΩ
@VGS=4.5V RDS(ON)(Typ.)=7mΩ
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
MXN3016M应用：
DC/DC Converters in Computing, Servers, and POL
Isolated DC/DC Converters in Telecom and Industrial
Uninterruptible Power Supply
MXN3016M典型应用及引脚图：
MXN3016M典型应用及引脚图：
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