产品分类
AKT2055Q General Description：
AKT2055Q是Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A的N-MOS，提供PDFN3.3*3.3-8封装。
The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application,Power management and general purpose applications.
AKT2055Q Features：
Extremely Low RDS(on):
Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
Good stability and uniformity
100% avalanche tested
Excellent package for good heat dissipation
AKT2055Q Schematic：
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