MXD3080K Description：
    MXD3080K是VDS=30V, ID=80A,RDS(ON)(Typ.)=3.7mΩ@VGS=10V,RDS(ON)(Typ.)=6mΩ@VGS=4.5V的N沟道MOS，提供TO252封装。丝印：3080K

    These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

    These devices are well suited for high efficiency fast switching applications.

VDS=30V, ID=80A

RDS(ON)(Typ.)=3.7mΩ@VGS=10V

RDS(ON)(Typ.)=6mΩ@VGS=4.5V

Improved dv/dt capability

100% EAS Guaranteed

Fast switching

NB / VGA / VCORE

POL Applications

SMPS 2nd SR