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HYG053N10NS1D/U/V TO251-2L,TO251-3L,TO251-3S

    HYG053N10NS1D/U/V是VDS=100V,ID=95A,RDS(ON)=5.2mΩ(typ.)@VGS=10V的N沟道MOSFET.提供O251-2L,TO251-3L,TO251-3S封装。

HYG053N10NS1D/U/V Description:
    HYG053N10NS1D/U/V是VDS=100V,ID=95A,RDS(ON)=5.2mΩ(typ.)@VGS=10V的N沟道MOSFET.提供O251-2L,TO251-3L,TO251-3S封装。

HYG053N10NS1D/U/V Feature:
100V/95A
RDS(ON)=5.2mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen-Free Devices Available(RoHS Compliant)

HYG053N10NS1D/U/V Applications:
Switching Application
Motor control and drive
Battery management

HYG053N10NS1D/U/V Pin Description:
HYG053N10NS1D/U/V Avalanche Test Circuit:
HYG053N10NS1D/U/V Switching Time Test Circuit:
HYG053N10NS1D/U/V Gate Charge Test Circuit:
HYG053N10NS1D/U/V Device Per Unit:
PackageType UnitQuantity
TO-252-2LTube75
TO-252-2LReel2500
TO-251-3LTube75
TO-251-3STube75

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